STP03N10U263-U220 100V 3mΩ SGT MOSFET

Name: STP03N10U263-U220 100V 3mΩ SGT MOSFET
Brand: STST
SKU: STP03N10U263-U220

STP03N10U263-U220

The STP03N10U263-U220 is a 100V N-channel enhancement-mode SGT power MOSFET built on advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy capability. It delivers a maximum continuous drain current of 180A at 25℃ (package limited, 200A silicon limited) and 720A pulsed, with RDS(on) of 3mΩ max (2.7mΩ typ) at VGS=10V, a total gate charge of only 131nC, single-pulse avalanche energy up to 784mJ, and a body diode reverse recovery time of 80ns with 195nC reverse recovery charge. The gate threshold voltage is 3V typical (2~4V), maximum power dissipation reaches 250W, and the operating junction temperature range is -55~+150℃. Offered in TO-263 and TO-220 packages with low on-resistance, low gate charge and high avalanche ruggedness, the device is widely used in BMS and high current switching applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)100

ID(Max.)180

RDS(on)(Max.)3

g(Typ)-

PackageTO-263 / TO-220

Product details

Overview

The STP03N10U263-U220 is a 100V N-channel enhancement-mode SGT power MOSFET manufactured with advanced double trench technology, combining low on-resistance, low gate charge with superior switching performance and avalanche ruggedness. It supports a maximum continuous drain current of 180A at 25℃ (package limited, 200A silicon limited) and 720A pulsed, with RDS(on) of 3mΩ max (2.7mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a total gate charge of 131nC and a low reverse transfer capacitance of 110pF. The device withstands single-pulse avalanche energy up to 784mJ, its body diode achieves a reverse recovery time of 80ns with 195nC reverse recovery charge, and it dissipates up to 250W over a -55~+150℃ junction temperature range. Offered in TO-263 and TO-220 packages, it provides high-efficiency, high-reliability power switching for BMS and high current switching applications.

Features

Advanced double trench (SGT) technology, N-channel enhancement-mode power MOSFET
Low on-resistance: RDS(on) 3mΩ max (2.7mΩ typ) at VGS=10V, ID=50A
Max continuous drain current 180A (TC=25℃, package limited), pulsed drain current 720A
Low gate charge: Qg 131nC typ, low reverse transfer capacitance Crss 110pF typ
Fast switching: turn-on delay 32ns, rise time 40ns, turn-off delay 80ns, fall time 35ns
High avalanche ruggedness: EAS 784mJ (L=0.5mH, Ias=56A)
Body diode reverse recovery time 80ns, reverse recovery charge 195nC
Max power dissipation 250W, operating junction temperature -55~+150℃
TO-263 / TO-220 packages, RoHS product