STP02N08U263-U220 85V 2mΩ SGT MOSFET
Specifications
Product details
Overview
The STP02N08U263-U220 is an 85V/180A N-channel enhancement-mode SGT (shielded gate trench) MOSFET built on advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy. On-resistance is just 2mΩ max (1.6mΩ typ) at VGS=10V, ID=50A, while the total gate charge is only 240nC typ (56nC Qgs, 60nC Qgd) with a low reverse transfer capacitance of 472pF, significantly reducing conduction and switching losses in high-current applications. The device supports a pulsed drain current of 720A and a single-pulse avalanche energy EAS of up to 1764mJ (L=0.5mH, Ias=84A), dissipates up to 416.6W with a junction-to-case thermal resistance of only 0.3℃/W, and operates over a -55~+150℃ junction temperature range; its body diode achieves a 120ns reverse recovery time, 360nC reverse recovery charge and 1.2V forward voltage. Offered in TO-263 and TO-220 packages, the STP02N08U263-U220 provides a high-efficiency, high-reliability power device solution for battery management systems (BMS) and high current switching applications.
Features
- 85V drain-source voltage, 180A continuous drain current (package limited), 720A pulsed drain current
- On-resistance: RDS(on) 2mΩ max @ VGS=10V (1.6mΩ typ)
- Total gate charge Qg 240nC typ, low reverse transfer capacitance Crss 472pF, fast switching
- Advanced double trench technology for lower conduction loss and improved switching performance
- High avalanche ruggedness: single-pulse avalanche energy EAS 1764mJ (L=0.5mH, Ias=84A)
- ±20V gate-source voltage, 2~4V gate threshold voltage
- Body diode reverse recovery time 120ns, reverse recovery charge 360nC, forward voltage 1.2V
- Max power dissipation 416.6W, junction-to-case thermal resistance 0.3℃/W, -55~+150℃ junction temperature
- TO-263 / TO-220 packages for good heat dissipation
- RoHS product
Typical Applications
- Battery management systems (BMS)
- High current switching applications
