STP038N15UT16L 150V 3.5mΩ SGT MOSFET

Name: STP038N15UT16L 150V 3.5mΩ SGT MOSFET
Brand: STST
SKU: STP038N15UT16L

STP038N15UT16L

The STP038N15UT16L is a 150V N-channel enhancement-mode shielded gate trench (SGT) MOSFET built on advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy. It delivers a maximum continuous drain current of 281A at 25℃ (silicon limited) and 1124A pulsed, with RDS(on) of 3.5mΩ max (2.8mΩ typ) at VGS=10V, a total gate charge of only 140nC and a low reverse transfer capacitance of 11.1pF for outstanding drive and switching loss performance. The device withstands avalanche energy up to 1225mJ, while its body diode achieves a reverse recovery time of 110ns with 395nC reverse recovery charge. With a typical gate threshold voltage of 3V (2~4V), 500W max power dissipation, a low 0.25℃/W junction-to-case thermal resistance and a -55~+150℃ junction temperature range, the STP038N15UT16L is housed in a TOLT-16L package and is ideal for motor drivers and high current applications demanding high efficiency, power density and reliability.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)150

ID(Max.)281

RDS(on)(Max.)3.5

g(Typ)-

PackageTOLT-16L

Product details

Overview

The STP038N15UT16L is a 150V N-channel enhancement-mode shielded gate trench (SGT) MOSFET manufactured with advanced double trench technology, combining low on-resistance, low gate charge and superior switching performance. It supports a maximum continuous drain current of 281A at 25℃ (silicon limited) and 1124A pulsed, with RDS(on) of 3.5mΩ max (2.8mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a total gate charge of only 140nC, 13308pF input capacitance, a low 11.1pF reverse transfer capacitance and 1.43Ω gate resistance. Its body diode features a typical 0.5V forward voltage, a reverse recovery time of 110ns and 395nC reverse recovery charge. The device withstands 1225mJ avalanche energy, dissipates up to 500W, offers a low 0.25℃/W junction-to-case thermal resistance, operates over a -55~+150℃ junction temperature range, and is offered in a TOLT-16L package, delivering high efficiency, power density and reliability for motor drivers and high current applications.

Features

N-channel enhancement-mode shielded gate trench (SGT) MOSFET with advanced double trench technology for lower conduction loss, improved switching performance and enhanced avalanche energy
Fast switching: 22ns turn-on delay, 61ns turn-off delay
Low on-resistance: 3.5mΩ max (2.8mΩ typ) at VGS=10V
Low gate charge: total gate charge Qg 140nC, low drive losses
Low reverse transfer capacitance: Crss 11.1pF
High avalanche ruggedness: EAS 1225mJ
Max continuous drain current 281A (TC=25℃, silicon limited), pulsed drain current 1124A, max power dissipation 500W
Operating junction temperature -55~+150℃, TOLT-16L package
RoHS product