STP021N10 100V 2.1mΩ SGT MOSFET

Overview

The STP021N10 is a 100V N-channel enhancement-mode shielded gate trench (SGT) power MOSFET manufactured with advanced Double Trench II technology, which significantly reduces conduction loss, improves switching performance and enhances avalanche energy capability. It supports a maximum continuous drain current of 292A at 25℃ (silicon limited, 360A package limited), 184.6A at TC=100℃, and 1168A pulsed, with an ultra-low RDS(on) of 2.1mΩ max (1.6mΩ typ) at VGS=10V. The device offers a total gate charge of 168nC, a reverse transfer capacitance as low as 532pF for fast switching, a single-pulse avalanche energy of up to 1225mJ, a maximum power dissipation of 312.5W, and a junction-to-case thermal resistance of only 0.4℃/W. Its body diode achieves a reverse recovery time of 66ns with 200nC reverse recovery charge, the gate-source voltage is rated at ±20V, and the operating junction temperature range is -55~+150℃. Offered in a TOLL-8 surface-mount package, the STP021N10 combines ultra-low on-resistance with high reliability, making it an ideal choice for battery management systems (BMS) and high-current switching applications.

Features

• N-channel enhancement-mode SGT structure with advanced Double Trench II technology
• 100V drain-source blocking voltage with ultra-low on-resistance: RDS(on) 2.1mΩ max (1.6mΩ typ) at VGS=10V, ID=50A
• Max continuous drain current 292A (silicon limited, TC=25℃), 360A package limited, pulsed drain current 1168A
• Low gate charge: total gate charge Qg 168nC (VDD=50V, ID=100A, VGS=10V)
• Low reverse transfer capacitance Crss 532pF, fast switching
• High avalanche ruggedness: single-pulse avalanche energy EAS 1225mJ
• Body diode reverse recovery time 66ns, reverse recovery charge 200nC, max power dissipation 312.5W
• Operating junction temperature -55~+150℃, TOLL-8 package
• RoHS product

Typical Applications

• Battery management systems (BMS)
• High current switching applications