STP02N08U247 85V 2mΩ SGT MOSFET
Specifications
Product details
Overview
The STP02N08U247 is an 85V N-channel enhancement-mode SGT power MOSFET manufactured with advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy. It supports a maximum continuous drain current of 180A at 25℃ (package limited) and 720A pulsed, with RDS(on) of 2mΩ max (1.6mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a total gate charge of 240nC, a low reverse transfer capacitance of only 472pF, and a body diode reverse recovery time of 120ns with 360nC recovery charge. The device withstands a single-pulse avalanche energy of 1764mJ, dissipates up to 595.2W, operates over a -55~+150℃ junction temperature range, and is offered in a TO-247 package, making it an ideal choice for BMS and high current switching applications.
Features
- N-channel enhancement-mode SGT MOSFET, advanced double trench technology
- 85V drain-source breakdown voltage with low on-resistance: 2mΩ max (1.6mΩ typ) at VGS=10V
- Max continuous drain current 180A (TC=25℃, package limited), pulsed drain current 720A
- Low gate charge: total gate charge Qg 240nC, fast switching
- Low reverse transfer capacitance Crss 472pF
- High avalanche ruggedness: single-pulse avalanche energy EAS 1764mJ
- Body diode Trr 120ns, max power dissipation 595.2W
- Operating junction temperature -55~+150℃, TO-247 package
- RoHS product
Typical Applications
- BMS (battery management systems)
- High current switching applications
