STP065N08GLPQ8 85V 6mΩ SGT MOSFET

Overview

The STP065N08GLPQ8 is an 85V N-channel enhancement-mode SGT (shielded gate trench) power MOSFET based on advanced double trench technology, combining low on-resistance and low gate charge with superior switching performance. It features an 85V drain-source breakdown voltage, a maximum continuous drain current of 80A at 25℃ (package limited, 109A silicon limited) and 320A pulsed, RDS(on) of 6mΩ max (5.2mΩ typ) at VGS=10V and 8.5mΩ max (7.5mΩ typ) at VGS=4.5V, a typical gate threshold voltage of 1.8V (1~2.5V), a typical total gate charge of 68nC and a reverse transfer capacitance of only 8pF. The device withstands a single-pulse avalanche energy of 225mJ, its body diode achieves a 55ns reverse recovery time with 60nC recovery charge, it dissipates up to 125W, operates over a -55~+150℃ junction temperature range, and is offered in a PDFN 5×6 surface-mount package, designed for synchronous rectification and high speed switching applications.

Features

• N-channel enhancement-mode SGT MOSFET with advanced double trench technology for lower conduction loss and improved switching performance
• Low on-resistance: RDS(on) 6mΩ max (5.2mΩ typ) at VGS=10V
• 85V drain-source breakdown voltage, max continuous drain current 80A (package limited), pulsed drain current 320A
• Low gate charge: total gate charge Qg 68nC typ, low reverse transfer capacitance Crss 8pF
• Fast switching, body diode reverse recovery time 55ns, reverse recovery charge 60nC
• High avalanche ruggedness: single-pulse avalanche energy EAS 225mJ
• Max power dissipation 125W, operating junction temperature -55~+150℃, PDFN 5×6 package
• RoHS product

Typical Applications

• Synchronous rectification
• High speed switching applications