STP038N15U263-U220 150V 3.8mΩ SGT MOSFET

Name: STP038N15U263-U220 150V 3.8mΩ SGT MOSFET
Brand: STST
SKU: STP038N15U263-U220

STP038N15U263-U220

The STP038N15U263-U220 is a 150V N-channel enhancement-mode SGT (Shielded Gate Trench) power MOSFET fabricated with advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy. It delivers a maximum continuous drain current of 239A at 25℃ (silicon limited, 151.5A at TC=100℃) and a pulsed drain current up to 956A, with RDS(on) of only 3.8mΩ max (3.3mΩ typ) at VGS=10V. Its typical total gate charge is 150nC and reverse transfer capacitance is as low as 24.3pF, enabling fast switching and low drive loss. The device offers a single-pulse avalanche energy of 1225mJ, a body-diode reverse recovery time of 110ns with 395nC reverse recovery charge, a typical gate threshold voltage of 3V (2~4V), and a maximum power dissipation of 500W over a -55~+150℃ junction temperature range. Housed in TO-263 and TO-220 packages, it is widely used in motor drivers and high current applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)150

ID(Max.)239

RDS(on)(Max.)3.8

g(Typ)-

PackageTO-263 / TO-220

Product details

Overview

The STP038N15U263-U220 is a 150V N-channel enhancement-mode SGT (Shielded Gate Trench) power MOSFET built with advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy. It supports a maximum continuous drain current of 239A at 25℃ (silicon limited, 151.5A at TC=100℃) and a pulsed drain current of 956A, with RDS(on) of 3.8mΩ max (3.3mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), and a typical total gate charge of 150nC with a reverse transfer capacitance of only 24.3pF for fast switching. The device delivers a single-pulse avalanche energy of 1225mJ and a maximum power dissipation of 500W, operates over a -55~+150℃ junction temperature range, and is offered in TO-263 and TO-220 packages, making it an ideal choice for motor drivers and high current applications.

Features

Advanced double trench technology, N-channel enhancement-mode SGT MOSFET
150V blocking voltage with low on-resistance: 3.8mΩ max (3.3mΩ typ) at VGS=10V
Max continuous drain current 239A (TC=25℃, silicon limited), pulsed drain current 956A
Total gate charge Qg 150nC typ, low reverse transfer capacitance Crss 24.3pF, fast switching
High avalanche ruggedness, single-pulse avalanche energy EAS 1225mJ
Body diode reverse recovery time Trr 110ns, reverse recovery charge Qrr 395nC
Max power dissipation 500W, operating junction temperature -55~+150℃
TO-263 / TO-220 package, RoHS product