STP03N10UL8-U263-7 100V 3mΩ SGT MOSFET

Name: STP03N10UL8-U263-7 100V 3mΩ SGT MOSFET
Brand: STST
SKU: STP03N10UL8-U263-7

STP03N10UL8-U263-7

The STP03N10UL8-U263-7 is a 100V N-channel enhancement-mode SGT MOSFET built on advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy. It delivers a maximum continuous drain current of 216A at 25℃ (silicon limited, 300A package limited), 137A at TC=100℃ and 864A pulsed, with RDS(on) of 3mΩ max (2.3mΩ typ) at VGS=10V, a total gate charge of only 131nC and a low reverse transfer capacitance of 110pF for fast switching. The device features 784mJ avalanche energy, 250W power dissipation and a body diode reverse recovery time of 80ns over a -55~+150℃ junction temperature range. Offered in TOLL-8 and TO-263-7 packages, it is ideal for battery management systems (BMS) and high current switching applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)100

ID(Max.)216

RDS(on)(Max.)3

g(Typ)-

PackageTOLL-8 / TO-263-7

Product details

Overview

The STP03N10UL8-U263-7 is a 100V N-channel enhancement-mode SGT MOSFET manufactured with advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy. It supports a maximum continuous drain current of 216A at 25℃ (silicon limited, 300A package limited) and 864A pulsed, with RDS(on) of 3mΩ max (2.3mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a total gate charge of only 131nC and a low reverse transfer capacitance of 110pF. The device delivers 784mJ avalanche energy, 250W maximum power dissipation, and a body diode with 80ns reverse recovery time and 195nC reverse recovery charge over a -55~+150℃ junction temperature range. Offered in TOLL-8 and TO-263-7 packages, it provides a high-efficiency, high-reliability power switching solution for battery management systems (BMS) and high current switching applications.

Features

Advanced double trench (SGT) technology, N-channel enhancement-mode power MOSFET
Low on-resistance: 3mΩ max (2.3mΩ typ) RDS(on) at VGS=10V, ID=50A
Max continuous drain current 216A (silicon limited, TC=25℃), pulsed drain current 864A
Low gate charge: Qg 131nC typ, fast switching
Low reverse transfer capacitance: Crss 110pF typ
High avalanche ruggedness: EAS 784mJ, max power dissipation 250W
Body diode with 80ns reverse recovery time and 195nC reverse recovery charge
Operating junction temperature -55~+150℃, TOLL-8 / TO-263-7 package
RoHS product