STP03N10U247 100V 3mΩ SGT MOSFET

Name: STP03N10U247 100V 3mΩ SGT MOSFET
Brand: STST
SKU: STP03N10U247

STP03N10U247

The STP03N10U247 is a 100V N-channel enhancement-mode SGT MOSFET built with advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy capability. It delivers a maximum continuous drain current of 180A at 25℃ (package limited; 239A silicon limited) and 720A pulsed, with RDS(on) of 3mΩ max (2.7mΩ typ) at VGS=10V, a typical total gate charge of 131nC and a low reverse transfer capacitance of 110pF for outstanding drive and switching loss performance. The device withstands a single-pulse avalanche energy of 784mJ, dissipates up to 357W, and its body diode achieves a reverse recovery time of 80ns with 195nC reverse recovery charge. With a typical gate threshold voltage of 3V (2~4V) and a -55~+150℃ operating junction temperature range, the STP03N10U247 is offered in a TO-247 package and is ideal for BMS and high current switching applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)100

ID(Max.)180

RDS(on)(Max.)3

g(Typ)-

PackageTO-247

Product details

Overview

The STP03N10U247 is a 100V N-channel enhancement-mode SGT MOSFET manufactured with advanced double trench technology, combining low on-resistance, low gate charge and superior switching performance. It supports a maximum continuous drain current of 180A at 25℃ (package limited; 239A silicon limited) and 720A pulsed, with RDS(on) of 3mΩ max (2.7mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a typical total gate charge of 131nC and a reverse transfer capacitance of only 110pF. The device handles a single-pulse avalanche energy of 784mJ, dissipates up to 357W, and its body diode achieves a reverse recovery time of 80ns with 195nC reverse recovery charge. Operating over a -55~+150℃ junction temperature range and housed in a TO-247 package, it is an ideal choice for BMS and high current switching applications.

Features

N-channel enhancement-mode SGT MOSFET with advanced double trench technology
Fast switching with low on-resistance: RDS(on) 3mΩ max (2.7mΩ typ) at VGS=10V
Max continuous drain current 180A (TC=25℃, package limited), pulsed drain current 720A
Low gate charge: total gate charge Qg 131nC typ
Low reverse transfer capacitance: Crss 110pF typ
High avalanche ruggedness: single-pulse avalanche energy EAS 784mJ, max power dissipation 357W
Body diode reverse recovery time 80ns, reverse recovery charge 195nC
Operating junction temperature -55~+150℃, TO-247 package
RoHS product