STP038N15U247 150V 3.8mΩ SGT MOSFET

Name: STP038N15U247 150V 3.8mΩ SGT MOSFET
Brand: STST
SKU: STP038N15U247

STP038N15U247

The STP038N15U247 is a 150V N-channel enhancement-mode SGT (shielded gate trench) power MOSFET fabricated with advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy capability. It delivers a maximum continuous drain current of 267A at 25℃ (silicon limited), 169.3A at TC=100℃ and up to 1068A pulsed, with RDS(on) of 3.8mΩ max (3.3mΩ typ) at VGS=10V, a total gate charge of only 150nC and a reverse transfer capacitance as low as 24.3pF, combining low on-resistance, low drive loss and fast switching. The device offers an avalanche energy EAS of 1225mJ, a maximum power dissipation of 625W, a body diode reverse recovery time of 110ns and a typical gate threshold voltage of 3V (2~4V), operating over a -55~+150℃ junction temperature range. Housed in a TO-247 package, the STP038N15U247 is well suited for motor drivers and high current applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)150

ID(Max.)267

RDS(on)(Max.)3.8

g(Typ)-

PackageTO-247

Product details

Overview

The STP038N15U247 is a 150V N-channel enhancement-mode SGT (shielded gate trench) power MOSFET built on advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy capability. It supports a maximum continuous drain current of 267A at 25℃ (silicon limited) and 169.3A at TC=100℃, with 1068A pulsed, an RDS(on) of 3.8mΩ max (3.3mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a total gate charge of only 150nC and a reverse transfer capacitance as low as 24.3pF for fast switching. Its body diode achieves a reverse recovery time of 110ns. With an avalanche energy EAS of 1225mJ, a maximum power dissipation of 625W, a junction-to-case thermal resistance of only 0.2℃/W and a -55~+150℃ operating junction temperature range, the TO-247 packaged STP038N15U247 provides a low-loss, highly reliable power switching solution for motor drivers and high current applications.

Features

N-channel enhancement-mode SGT shielded gate structure, advanced double trench technology
150V drain-source breakdown voltage with low on-resistance: 3.8mΩ max (3.3mΩ typ) at VGS=10V
Max continuous drain current 267A (TC=25℃, silicon limited), pulsed drain current 1068A
Total gate charge Qg 150nC typ, reverse transfer capacitance Crss only 24.3pF, fast switching
High avalanche ruggedness: EAS 1225mJ, max power dissipation 625W
Body diode reverse recovery time Trr 110ns, reverse recovery charge Qrr 395nC
Operating junction temperature -55~+150℃, TO-247 package
RoHS product