STP065N08GU252-U251 85V 6.5mΩ SGT MOSFET

Overview

The STP065N08GU252-U251 is an 85V N-channel enhancement-mode SGT MOSFET based on advanced double trench technology, combining low on-resistance, low gate charge and superior switching performance. It supports a drain-source voltage of 85V, a maximum continuous drain current of 80A (package limited, 105A silicon limited) and 320A pulsed, with RDS(on) of 6.5mΩ max (5.4mΩ typ) at VGS=10V, a typical gate threshold voltage of 3.0V (2.0~4.0V), a total gate charge of only 61.2nC and a low reverse transfer capacitance of 11.7pF. The device achieves a single-pulse avalanche energy of 196mJ, a body diode reverse recovery time of 55ns, a maximum power dissipation of 125W and an operating junction temperature range of -55~+150℃, and is offered in TO-252 and TO-251 packages, delivering high-efficiency, low-loss power switching for switching applications and motor drivers.

Features

• Advanced double trench technology, N-channel enhancement-mode SGT MOSFET
• 85V drain-source voltage with low on-resistance: 6.5mΩ max (5.4mΩ typ) at VGS=10V
• Max continuous drain current 80A (package limited), pulsed drain current 320A
• Total gate charge Qg 61.2nC, low reverse transfer capacitance Crss 11.7pF, fast switching
• High avalanche ruggedness: single-pulse avalanche energy EAS 196mJ (L=0.5mH, IAS=28A)
• Body diode reverse recovery time 55ns, reverse recovery charge 60nC
• Max power dissipation 125W, operating junction temperature -55~+150℃
• Available in TO-252 / TO-251 packages
• RoHS product

Typical Applications

• Switching applications
• Motor drivers