STP038N15UL8-UL263-7 150V 3.8mΩ SGT MOSFET

Name: STP038N15UL8-UL263-7 150V 3.8mΩ SGT MOSFET
Brand: STST
SKU: STP038N15UL8-UL263-7

STP038N15UL8-UL263-7

The STP038N15UL8-UL263-7 is a 150V N-channel enhancement-mode SGT MOSFET built on advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy capability. It delivers a maximum continuous drain current of 254A (silicon limited, TC=25℃), 160.9A at TC=100℃ and 1016A pulsed, with RDS(on) of 3.8mΩ max (2.9mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a total gate charge of only 150nC and a reverse transfer capacitance as low as 24.3pF for outstanding switching loss performance. The device offers a single-pulse avalanche energy of 1225mJ, 500W max power dissipation, and a body diode with 110ns reverse recovery time and 395nC reverse recovery charge, operating over a -55~+150℃ junction temperature range. Available in TOLL-8 and TO-263-7 packages, it is widely used in motor drivers and high current applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)150

ID(Max.)254

RDS(on)(Max.)3.8

g(Typ)-

PackageTOLL-8 / TO-263-7

Product details

Overview

The STP038N15UL8-UL263-7 is a 150V N-channel enhancement-mode SGT MOSFET based on advanced double trench technology, combining low on-resistance, low gate charge and superior switching performance. It supports a maximum continuous drain current of 254A (silicon limited, TC=25℃), 160.9A at TC=100℃ and 1016A pulsed, with RDS(on) of 3.8mΩ max (2.9mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a total gate charge of only 150nC and a reverse transfer capacitance of just 24.3pF. The device delivers 1225mJ single-pulse avalanche energy, 500W max power dissipation and a low 0.25℃/W junction-to-case thermal resistance, while its body diode achieves a 110ns reverse recovery time and 395nC reverse recovery charge. Operating over a -55~+150℃ junction temperature range and offered in TOLL-8 and TO-263-7 packages, it provides a high-efficiency, high-reliability power switching solution for motor drivers and high current applications.

Features

N-channel enhancement-mode SGT MOSFET, advanced double trench technology for lower conduction loss and higher avalanche capability
Fast switching with low reverse transfer capacitance (Crss 24.3pF typ)
Low on-resistance: RDS(on) 3.8mΩ max (2.9mΩ typ) at VGS=10V
Max continuous drain current 254A (silicon limited, TC=25℃), pulsed drain current 1016A
Low gate charge: Qg 150nC typ, low switching losses
High avalanche ruggedness: single-pulse avalanche energy EAS 1225mJ
Max power dissipation 500W, junction-to-case thermal resistance 0.25℃/W
Operating junction temperature -55~+150℃, TOLL-8 / TO-263-7 packages
RoHS product