STP02N08UL8 85V 1.5mΩ SGT MOSFET

Name: STP02N08UL8 85V 1.5mΩ SGT MOSFET
Brand: STST
SKU: STP02N08UL8

STP02N08UL8

The STP02N08UL8 is an 85V N-channel enhancement-mode shielded gate trench (SGT) power MOSFET built on advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy. It delivers a maximum continuous drain current of 360A at 25℃ (package limited, 371A silicon limited) and 1440A pulsed, with RDS(on) of 1.5mΩ max (1.2mΩ typ) at VGS=10V, a typical total gate charge of 240nC and a low reverse transfer capacitance of 472pF for fast switching and low drive loss. With high avalanche ruggedness up to 1764mJ single-pulse avalanche energy, a body diode reverse recovery time of 120ns, a maximum power dissipation of 462.9W and a -55~+150℃ operating junction temperature range, the device is housed in a TOLL-8 surface-mount package and is ideal for BMS and high current switching applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)85

ID(Max.)360

RDS(on)(Max.)1.5

g(Typ)-

PackageTOLL-8

Product details

Overview

The STP02N08UL8 is an 85V N-channel enhancement-mode SGT power MOSFET based on advanced double trench technology, combining low on-resistance, low gate charge and superior switching performance. It supports a maximum continuous drain current of 360A at 25℃ (371A silicon limited) and 1440A pulsed, with RDS(on) of 1.5mΩ max (1.2mΩ typ) at VGS=10V, a gate threshold voltage of 2~4V (3V typ), a typical total gate charge of 240nC and a reverse transfer capacitance of only 472pF. The device offers 1764mJ single-pulse avalanche energy, a body diode reverse recovery time of 120ns with 360nC reverse recovery charge, 462.9W maximum power dissipation and a -55~+150℃ junction temperature range. Offered in a TOLL-8 package, it is an ideal choice for BMS and high current switching applications.

Features

N-channel enhancement-mode, advanced double trench SGT technology
85V blocking voltage with low on-resistance: 1.5mΩ max (1.2mΩ typ) at VGS=10V
Max continuous drain current 360A (TC=25℃), pulsed drain current 1440A
Total gate charge Qg 240nC, low reverse transfer capacitance, fast switching
High avalanche ruggedness, single-pulse avalanche energy EAS 1764mJ
Body diode reverse recovery time 120ns, forward voltage 1.2V max
Max power dissipation 462.9W, operating junction temperature -55~+150℃
TOLL-8 package, RoHS product