STP065N08GU263-U220 85V 6.5mΩ SGT MOSFET

Name: STP065N08GU263-U220 85V 6.5mΩ SGT MOSFET
Brand: STST
SKU: STP065N08GU263-U220

STP065N08GU263-U220

The STP065N08GU263-U220 is an 85V N-channel enhancement-mode SGT (shielded gate trench) power MOSFET built with advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy. It delivers a package-limited maximum continuous drain current of 80A (118A silicon limited) and 320A pulsed, with RDS(on) of 6.5mΩ max (5.4mΩ typ) at VGS=10V, a total gate charge of only 64nC and a low reverse transfer capacitance of 13.5pF for fast switching. The device withstands a single-pulse avalanche energy of 196mJ, dissipates up to 156.2W, features a body diode reverse recovery time of 57ns, and operates over a -55~+150℃ junction temperature range. Offered in TO-263 / TO-220 packages, it is an ideal device for motor drivers and high-speed switching applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)85

ID(Max.)80

RDS(on)(Max.)6.5

g(Typ)-

PackageTO-263 / TO-220

Product details

Overview

The STP065N08GU263-U220 is an 85V N-channel enhancement-mode SGT (shielded gate trench) power MOSFET based on advanced double trench technology, combining low on-resistance, low gate charge and superior switching performance. It supports a package-limited maximum continuous drain current of 80A (118A silicon limited, 75A silicon limited at TC=100℃) and 320A pulsed, with RDS(on) of 6.5mΩ max (5.4mΩ typ) at VGS=10V, a gate threshold voltage of 2.0~4.0V (3.0V typ), a total gate charge of only 64nC and a reverse transfer capacitance as low as 13.5pF. The device withstands a single-pulse avalanche energy of 196mJ, dissipates up to 156.2W, and its body diode achieves a reverse recovery time of 57ns with a forward voltage of 1.2V max. Operating over a -55~+150℃ junction temperature range and offered in TO-263 / TO-220 packages, it delivers a high-efficiency, low-loss power solution for switching applications and motor drivers.

Features

N-channel enhancement-mode SGT MOSFET, advanced double trench technology for lower conduction loss, improved switching performance and enhanced avalanche energy
85V drain-source voltage with low on-resistance: 6.5mΩ max (5.4mΩ typ) at VGS=10V, ID=50A
Max continuous drain current 80A (package limited, TC=25℃), 118A silicon limited, 320A pulsed
Low total gate charge Qg 64nC typ, low reverse transfer capacitance Crss 13.5pF typ, fast switching
High avalanche ruggedness: single-pulse avalanche energy EAS 196mJ, max power dissipation 156.2W
Body diode reverse recovery time 57ns, forward voltage 1.2V max
Operating junction temperature -55~+150℃, TO-263 / TO-220 package
RoHS product