ST03N08UL8-U263-7 85V 2.5mΩ SGT MOSFET

Name: ST03N08UL8-U263-7 85V 2.5mΩ SGT MOSFET
Brand: STST
SKU: ST03N08UL8-U263-7

ST03N08UL8-U263-7

The ST03N08UL8-U263-7 is an 85V N-channel enhancement-mode SGT (shielded gate trench) power MOSFET built on advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy capability. It delivers a maximum continuous drain current of 253A at 25℃ (silicon limited, 300A package limited) and 1012A pulsed, with an RDS(on) of only 2.5mΩ max (1.9mΩ typ) at VGS=10V, a total gate charge of 138.3nC and a low reverse transfer capacitance of 152pF for outstanding drive and switching loss performance. The device features a single-pulse avalanche energy of 900mJ, a body diode reverse recovery time of 80ns with 196nC reverse recovery charge, a maximum power dissipation of 250W, and operates over a -55~+150℃ junction temperature range. Offered in TOLL-8 and TO-263-7 packages, the ST03N08UL8-U263-7 is widely used in BMS battery management systems and high current switching applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)85

ID(Max.)253

RDS(on)(Max.)2.5

g(Typ)-

PackageTOLL-8 / TO-263-7

Product details

Overview

The ST03N08UL8-U263-7 is an 85V N-channel enhancement-mode SGT (shielded gate trench) power MOSFET manufactured with advanced double trench technology, combining low on-resistance, low gate charge and superior switching performance with significantly enhanced avalanche energy capability. It supports a maximum continuous drain current of 253A at 25℃ (silicon limited, 300A package limited) and 1012A pulsed, with an RDS(on) of only 2.5mΩ max (1.9mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a total gate charge of 138.3nC and a reverse transfer capacitance of only 152pF. The device delivers a single-pulse avalanche energy of 900mJ, a body diode reverse recovery time of 80ns with 196nC reverse recovery charge, and a maximum power dissipation of 250W over a -55~+150℃ junction temperature range. Offered in TOLL-8 and TO-263-7 packages, it provides a high-efficiency, high-reliability power switching solution for BMS battery management systems and high current switching applications.

Features

Advanced double trench SGT technology, N-channel enhancement mode
85V blocking voltage with low on-resistance: 2.5mΩ max (1.9mΩ typ) at VGS=10V
Max continuous drain current 253A (TC=25℃, silicon limited), pulsed drain current 1012A
Low gate charge: total gate charge Qg 138.3nC, fast switching
Low reverse transfer capacitance: Crss 152pF typ
High avalanche ruggedness: single-pulse avalanche energy EAS 900mJ
Body diode reverse recovery time 80ns, reverse recovery charge 196nC
Max power dissipation 250W, operating junction temperature -55~+150℃
TOLL-8 / TO-263-7 packages, RoHS product