ST03N08U263-U220 85V 3mΩ SGT MOSFET

Name: ST03N08U263-U220 85V 3mΩ SGT MOSFET
Brand: STST
SKU: ST03N08U263-U220

ST03N08U263-U220

The ST03N08U263-U220 is an 85V N-channel enhancement-mode power MOSFET built on advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy capability. It delivers a maximum continuous drain current of 180A at 25℃ (package limited, 230A silicon limited) and 720A pulsed, with RDS(on) of 3mΩ max (2.3mΩ typ) at VGS=10V, a typical total gate charge of 138.3nC and a reverse transfer capacitance as low as 152pF for fast switching and low drive loss. The device features a single-pulse avalanche energy of 900mJ, 250W maximum power dissipation, a low junction-to-case thermal resistance of 0.5℃/W, a typical gate threshold voltage of 3V (2~4V), and a body diode with 80ns reverse recovery time and 196nC reverse recovery charge, operating over a -55~+150℃ junction temperature range. Offered in TO-263 and TO-220 packages, it is an ideal choice for BMS and high current switching applications.

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Specifications

Channel TypeN-Channel

ModeEnhancement

VDS(Max.)85

ID(Max.)180

RDS(on)(Max.)3

g(Typ)-

PackageTO-263 / TO-220

Product details

Overview

The ST03N08U263-U220 is an 85V N-channel enhancement-mode power MOSFET manufactured with advanced double trench technology, reducing conduction loss, improving switching performance and enhancing avalanche ruggedness. It supports a maximum continuous drain current of 180A at 25℃ (package limited, 230A silicon limited) and 720A pulsed, with RDS(on) of 3mΩ max (2.3mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a typical total gate charge of 138.3nC and a reverse transfer capacitance as low as 152pF. The device withstands a single-pulse avalanche energy of 900mJ, dissipates up to 250W with a junction-to-case thermal resistance of only 0.5℃/W, and its body diode achieves an 80ns reverse recovery time, 196nC reverse recovery charge and a maximum forward voltage of 1.2V. Operating over a -55~+150℃ junction temperature range and offered in TO-263 and TO-220 packages, it delivers a high-efficiency, high-reliability power switching solution for BMS and high current switching applications.

Features

N-channel enhancement mode, advanced double trench technology with low conduction loss and high avalanche ruggedness
Low on-resistance: RDS(on) 3mΩ max (2.3mΩ typ) at VGS=10V
Max continuous drain current 180A (TC=25℃, package limited), pulsed drain current 720A
Low gate charge: Qg 138.3nC typ, fast switching
Low reverse transfer capacitance: Crss 152pF typ
High avalanche ruggedness: single-pulse avalanche energy EAS 900mJ, max power dissipation 250W
Body diode reverse recovery time 80ns, max forward voltage 1.2V
Operating junction temperature -55~+150℃, TO-263 / TO-220 packages
RoHS product