ST03N08U247 85V 3mΩ SGT MOSFET
Specifications
Product details
Overview
The ST03N08U247 is an 85V N-channel enhancement-mode shielded gate trench (SGT) MOSFET manufactured with advanced double trench technology, which reduces conduction loss, improves switching performance and enhances avalanche energy, making it an ideal device for BMS and high current switching applications. It supports a maximum continuous drain current of 180A at 25℃ (package limited; 275A silicon limited) and 720A pulsed, with RDS(on) of 3mΩ max (2.3mΩ typ) at VGS=10V, a typical gate threshold voltage of 3V (2~4V), a total gate charge of 138.3nC, a single-pulse avalanche energy of 900mJ, and a maximum power dissipation of 357W over a -55~+150℃ junction temperature range. The built-in body diode features a maximum forward voltage of 1.2V, an 80ns reverse recovery time and a 196nC reverse recovery charge. Housed in a TO-247 package, it delivers high efficiency and reliability for BMS and high current switching applications.
Features
- Advanced double trench shielded gate (SGT) technology, N-channel enhancement mode
- 85V blocking voltage with low on-resistance: RDS(on) 3mΩ max (2.3mΩ typ) at VGS=10V
- Max continuous drain current 180A (TC=25℃, package limited), pulsed drain current 720A
- Fast switching, total gate charge Qg 138.3nC, low reverse transfer capacitance Crss 152pF
- High avalanche ruggedness, single-pulse avalanche energy EAS 900mJ
- Body diode reverse recovery time 80ns, reverse recovery charge 196nC
- Max power dissipation 357W, operating junction temperature -55~+150℃, TO-247 package
- RoHS product
Typical Applications
- BMS (Battery Management Systems)
- High current switching applications
