STC75N120 1200V 90mΩ AEC-Q101 SiC MOSFET
Specifications
Product details
Overview
The STC75N120 is an AEC-Q101 qualified 1200V N-channel enhancement-mode planar SiC MOSFET based on revolutionary silicon carbide material, combining low on-resistance, low capacitance and gate charge with superior switching performance. It supports a maximum continuous drain current of 40A at 25℃ and 80A pulsed, with RDS(on) of 90mΩ max (75mΩ typ) at VGS=15V and 80mΩ max (55mΩ typ) at VGS=18V, a typical gate threshold voltage of 2.5V (1.8~3.6V), and a total gate charge of only 63.5nC, the lowest in the platform. Its fast intrinsic diode achieves a reverse recovery time of 36.2ns. The device is 100% avalanche tested, dissipates up to 187.5W, operates over a -40~+175℃ junction temperature range, and is offered in a TO-247-4L package, delivering higher efficiency, faster switching frequency and a more compact system size than silicon devices for switching mode power supplies, solar inverters, DC-DC converters and automotive power applications.
Features
- Revolutionary semiconductor material - Silicon Carbide, N-channel enhancement-mode planar gate
- AEC-Q101 qualified for automotive-grade reliability
- 1200V high blocking voltage with low on-resistance: 90mΩ max (75mΩ typ) at VGS=15V
- Max continuous drain current 40A (TC=25℃), pulsed drain current 80A
- Total gate charge Qg 63.5nC, low switching losses
- Fast intrinsic diode with low reverse recovery: Trr 36.2ns, Qrr 231nC
- 100% avalanche tested, max power dissipation 187.5W
- Operating junction temperature -40~+175℃, TO-247-4L package
- RoHS product
Typical Applications
- Switching mode power supply
- Solar inverters
- DC-DC converters
- Automotive high-voltage power conversion
