STC16N120 1200V 31mΩ SiC MOSFET

Overview

The STC16N120 is a 1200V N-channel enhancement-mode planar SiC MOSFET based on revolutionary silicon carbide material, combining low on-resistance, low capacitance and gate charge with superior switching performance. It supports a maximum continuous drain current of 120A at 25℃ and 300A pulsed, with RDS(on) of 31mΩ max (22mΩ typ) at VGS=15V and 22mΩ max (16mΩ typ) at VGS=18V, a typical gate threshold voltage of 2.5V (1.8~3.6V), and a total gate charge of 160.9nC. Its fast intrinsic diode achieves a reverse recovery time of only 20.9ns. The device is 100% avalanche tested, dissipates up to 468.75W, operates over a -40~+175℃ junction temperature range, and is offered in a TO-247-4L package, delivering higher efficiency, faster switching frequency and a more compact system size than silicon devices for switching mode power supplies, solar inverters and DC-DC converters.

Features

• Revolutionary semiconductor material - Silicon Carbide, N-channel enhancement-mode planar gate
• 1200V high blocking voltage with low on-resistance: 31mΩ max (22mΩ typ) at VGS=15V
• Max continuous drain current 120A (TC=25℃), pulsed drain current 300A
• Total gate charge Qg 160.9nC, low switching losses
• Fast intrinsic diode with low reverse recovery: Trr 20.9ns, Qrr 439.1nC
• 100% avalanche tested, max power dissipation 468.75W
• Operating junction temperature -40~+175℃, TO-247-4L package
• RoHS product

Typical Applications

• Switching mode power supply
• Solar inverters
• DC-DC converters